题目：Current-driven magnetic resistance in van der Waals spin-filter antiferromagnetic tunnel junctions

报告人：张力舒  德国于利希研究中心

时间：2023年7月6日 下午4:00

地点：知新楼C1011

邀请人：牛成旺

摘要：Antiferromagnetic spintronics is a relatively new field that aims to exploit the unique properties of antiferromagnetic materials for spin-based information processing and storage. One of the key challenges in antiferromagnetic spintronics is the development of efficient ways to manipulate the spin and charge transport in these materials. One promising approach is the use of antiferromagnetic tunnel junctions (AFM-TJs). AFM-TJs have several advantages over the traditional magnetic tunnel junctions and offer the possibility of using antiferromagnetic materials with high Neel temperature, such as MnBi₂Te₄, which is a compound that has attracted a lot of attention in recent years due to its unique properties. The results show that the spin polarization of transport through double-layer MnBi₂Te₄ can be affected by adding more layers of h-BN and utilizing a double-layer MnBi₂Te₄ pinning layer. Our recent study also proposes the design for field-free spin-orbit torque (SOT) MRAM that combines a two-dimensional Van der Waals antiferromagnetic bilayer LaBr₂ with an inversion asymmetric monolayer, Td phase WTe₂. By using macrospin simulation and DFT combined with nonequilibrium Green function methods, the proposed SOT device exhibits a low critical current density, enabling field-free and fast magnetization switching, and demonstrates remarkable reading sensitivity. Overall, our works unveil new opportunities for 2D spin-orbitronics.