报告人：刘晓辉 博士，美国罗格斯大学

邀请人：解士杰 教授

时  间：2018年01月05日(周五) 上午10：00

地  点：知新楼C1113会议室

报告摘要：

Recently it has been shown that in some cases, electronic states in the ferroelectric contribute to the device conductance as the result of a modulation doping effect in which carriers are transferred from the electrode into the ferroelectric layers near the interface.  Here we report first-principles calculations and model analysis to elucidate the various aspects of this mechanism and to provide guidance in materials choices and interface termination for optimizing the on-off ratio, using BaTiO₃/n-SrTiO₃ and PbTiO₃/n-SrTiO₃ as prototypical systems. It is shown that the modulation doping is substantial in both cases, and an electrostatic model developed in this study provides a good description of the transferred charge distribution. This model can be used to suggest additional materials heterostructures for the design of active ferroelectric field effect transistors and ferroelectric tunneling junctions.  

报告人简介：

刘晓辉目前在罗格斯大学（Rutgers University）物理与天文系继续从事博士后研究工作。2006年、2009年分别获得买球最好的网站物理学学士和硕士学位；2014年获得内布拉斯加大学林肯分校（UNL）物理与天文系博士学位。主要运用第一性原理计算结合唯象模型研究复合铁电和铁磁异质结构，研究兴趣包括：超薄薄膜的铁电稳定性；与实验合作研究界面工程对铁电薄膜的影响；参杂铁电体的电子和结构性质；铁电隧道结以及铁电相关的肖特基势垒的铁电计划方向关联的可翻转电阻效应；具有铁磁电极的铁电隧道结构中的透射电流的自旋极化；铁电半导体中的自旋注入等。相关研究成果相继在Phys.Rev.Lett., Phys. Rev.B和Advanced Materials发表。