Tip-enhanced spectroscopy: chemical, structural and functional surface imaging at the nanoscale

发布日期:2017-09-19

报告人:Prof.  Andreas Ruediger

  Nanoelectronics-Nanophotonics
  INRS-EMT, Université du Québec
  1650, Boul. Lionel-Boulet, Varennes J3X1S2
  Québec, Canada     

  www.nanophotonics.ca

 

邀请人:尹笋, 高琨

时  间:2017921日(周四)上午1000

地  点:知新楼 C1111 报告厅

 

欢迎广大本科生、研究生、教师参加!

 

摘要: 

Optical spectroscopy has been the most proliferate scientific characterization tool of the last century despite its limited spatial resolution. In a complementary way, the superbe spatial topographic resolution of atomic force microscopy has often left open questions regarding the chemical, structural and functional properties. With the advent of a combined technique, tip-enhanced Raman spectroscopy, about 20 years ago, the wealth of information through optical spectroscopy became available with a resolution down to a few nanometers.

The presentation discusses some of our recent results making use of tip-enhanced spectroscopy to image refractive index profiles [1,2] as an evidence of phase segregation in III-V semiconductors [3] and functionalized tip-spectroscopy to image hot spots on surface-enhanced Raman spectroscopy surfaces [4]. We also provided direct evidence for the nature of the field enhancement for non-contact scanning techniques [5]. The results are in excellent agreement with numerical simulations for optical near fields. 

The last minutes of the presentation will address our group activities in nanoelectronics, in particular ferroelectric tunnel junctions for the use in non-volatile memory applications  [6,7].

[1] J. Plathier*, A. Krayev, V. Gavrilyuk, A. Pignolet, A. Ruediger, “Permittivity imaged at the nanoscale using tip-enhanced Raman spectroscopy”, Nanoscale Horizons (2017) DOI: 10.1039/C7NH00075H

[2] C. Dab*, G. Kolhatkar*, J. Plathier*, R. Thomas*, A. Ruediger, “Dependence of apertureless scanning near field spectroscopy on nanoscale refractive index changes”, Plasmonics, (2016), DOI 10.1007/s11468-016-0488-7 

[3] G. Kolhatkar*, A. Boucherif, C. Dab*, S. Fafard, V. Aimez, R. Arès, A. Ruediger, “Composition Variation in Al-Based Dilute Nitride Alloys Using Apertureless Scanning Near-Field Microscopy”, Physical Chemistry Chemical Physics, 18 (2016) 30546 

[4] C. Awada*, J. Plathier*, C. Dab*, F. Charra, L. Douillard, A. Ruediger, “High resolution scanning near field mapping of enhancement on SERS substrates: comparison with photoemission electron microscopy”, Physical Chemistry Chemical Physics, 18 (2016) 9405-9411 

[5] J. Plathier*, A. Merlen, A. Pignolet, A. Ruediger, ‘’Relation between plasmonic tip emission and electromagnetic enhancement evidenced in tip-enhanced Raman spectroscopy’’, Journal of Raman spectroscopy, (2017) accepted 

[6] F. Ambriz Vargas*, G. Kolhatkar*, R. Thomas*, R. Nouar, A. Sarkissian, C. Gomez-Yanez, M.A. Gauthier, A. Ruediger, “Tunneling electroresistance effect in a Pt/Hf0.5Zr0.5O2/Pt structure”. Applied Physics Letters, 110 (2017) 093106 

[7] F. Ambriz Vargas*, G. Kolhatkar*, M. Broyer*, A. Hadj Yussef*, R. Nouar, A. Sarkissian, R. Thomas*, C. Gomez-Yanez, M. Gauthier, A. Ruediger, “A Complementary Metal Oxide Semiconductor compatible ferroelectric tunnel junction”, Applied Materials and Interfaces, 9 (2017) 13262-13268

 

报告人简介:

Andreas Ruediger is full professor at Institut National de la Recherche Scientifique in the field of nanoelectronics and nanophotonics. He received his PhD in condensed matter physics (electron paramagnetic resonance for point defect analysis in photrefractive crystals) in 2001 at University of Osnabrück, Germany. He then spent two years as Feodor-Lynen Fellow of the Alexander-von-Humboldt foundation with J.F. Scott in Cambridge, UK, working on ferroelectric thin films. From 2003-2008, he was tenured senior scientist at Forschungszentrum Jülich and head of the nanoarchitecture laboratory, developing resistively switching memory cells and investigating finite size effects in ferroelectrics. At INRS-EMT, he is in charge of the research axis ‘Advanced materials’ and head of the laboratory for ferroelectric nanoelectronics, funded through the Canadian foundation for innovation. His group, currently comprising 1 Postdoctorate research fellow, 15 PhD students and 1 MSc student is focussing on hysteric oxides for non-volatile memory applications and functionalized scanning probe techniques. He is fellow of the Institute of Physics, UK, honorary fellow of Munich University of Applied Sciences and Research Ambassador of the German Academic Exchange Service (DAAD). He is associate editor of Functional Materials Letters, has co-authored more than 90 peer reviewed articles with more than 1500 citations.